Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation

IF Crowe; N Papachristodoulou; MP Halsall; NP Hylton; O Hulko; AP Knights; P Yang; RM Gwilliam; M Shah; AJ Kenyon

doi:10.1063/1.4772947

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Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation

Journal article

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Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation

IF Crowe, N Papachristodoulou, MP Halsall, NP Hylton, O Hulko, AP Knights, P Yang, RM Gwilliam, M Shah and AJ Kenyon

JOURNAL OF APPLIED PHYSICS, Vol.113(2), ARTN 02430

14/01/2013

DOI: https://doi.org/10.1063/1.4772947

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

PHOTOLUMINESCENCE EFFICIENCY

ION-IMPLANTATION

THIN-FILMS

PHOSPHORUS

SIO2

IMPROVEMENT

EMISSION

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Title: Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation
Creators: IF Crowe
N Papachristodoulou
MP Halsall
NP Hylton
O Hulko
AP Knights
P Yang
RM Gwilliam
M Shah
AJ Kenyon
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.113(2), ARTN 02430
Publisher: AMER INST PHYSICS
Date published: 14/01/2013
Date submitted: 17/05/2017
Identifiers: 99515867302346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation

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