Direct observation of indium precipitates in silicon following high dose ion implantation

KJ Dudeck; E Huante-Ceron; AP Knights; RM Gwilliam; GA Botton

doi:10.1088/0268-1242/28/12/125012

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Direct observation of indium precipitates in silicon following high dose ion implantation

Journal article

Peer reviewed

Direct observation of indium precipitates in silicon following high dose ion implantation

KJ Dudeck, E Huante-Ceron, AP Knights, RM Gwilliam and GA Botton

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.28(12), ARTN 12501

01/12/2013

DOI: https://doi.org/10.1088/0268-1242/28/12/125012

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Materials Science

Multidisciplinary

Physics

Condensed Matter

Engineering

Materials Science

Physics

ENGINEERING

ELECTRICAL & ELECTRONIC

MATERIALS SCIENCE

MULTIDISCIPLINARY

PHYSICS

CONDENSED MATTER

SOLID-PHASE EPITAXY

DIFFUSION

REDISTRIBUTION

REGROWTH

DAMAGE

MODEL

SI

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Title: Direct observation of indium precipitates in silicon following high dose ion implantation
Creators: KJ Dudeck
E Huante-Ceron
AP Knights
RM Gwilliam
GA Botton
Publication Details: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.28(12), ARTN 12501
Publisher: IOP PUBLISHING LTD
Date published: 01/12/2013
Date submitted: 17/05/2017
Identifiers: 99515384302346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Direct observation of indium precipitates in silicon following high dose ion implantation

Abstract

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