Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface

JJ Hamilton; NEB Cowern; JA Sharp; KJ Kirkby; EJH Collart; B Colombeau; M Bersani; D Giubertoni; A Parisini

doi:10.1063/1.2240257

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Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface

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Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface

JJ Hamilton, NEB Cowern, JA Sharp, KJ Kirkby, EJH Collart, B Colombeau, M Bersani, D Giubertoni and A Parisini

APPLIED PHYSICS LETTERS, Vol.89(4), pp.?-?

24/07/2006

DOI: https://doi.org/10.1063/1.2240257

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Science & Technology

Physical Sciences

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Applied

Physics

PHYSICS

APPLIED

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Title: Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface
Creators: JJ Hamilton
NEB Cowern
JA Sharp
KJ Kirkby
EJH Collart
B Colombeau
M Bersani
D Giubertoni
A Parisini
Publication Details: APPLIED PHYSICS LETTERS, Vol.89(4), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 24/07/2006
Date submitted: 27/05/2010
Identifiers: 99512157402346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface

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