Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots

DP Williams; AD Andreev; EP O'Reilly; DA Faux

doi:10.1103/PhysRevB.72.235318

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Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots

Journal article

Open access

Peer reviewed

Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots

DP Williams, AD Andreev, EP O'Reilly and DA Faux

PHYSICAL REVIEW B, Vol.72(23), pp.?-?

01/12/2005

DOI: https://doi.org/10.1103/PhysRevB.72.235318

Abstract

Science & Technology

Physical Sciences

Physics

Condensed Matter

Physics

PHYSICS

CONDENSED MATTER

STRAIN DISTRIBUTIONS

ELECTRONIC-STRUCTURE

III-NITRIDES

GAN

GROWTH

QDS

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Title: Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots
Creators: DP Williams
AD Andreev
EP O'Reilly
DA Faux
Publication Details: PHYSICAL REVIEW B, Vol.72(23), pp.?-?
Publisher: AMER PHYSICAL SOC
Date published: 01/12/2005
Date submitted: 27/05/2010
Identifiers: 99514274402346
Academic Unit: School of Maths and Physics
Language: English
Resource Type: Journal article

Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots

Abstract

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