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Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment
Journal article   Peer reviewed

Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment

D Giubertoni, G Pepponi, MA Sahiner, SP Kelty, S Gennaro, M Bersani, M Kah, KJ Kirkby, R Doherty, MA Foad, …
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol.28(1), pp.C1B1-C1B5
01/01/2010
DOI: https://doi.org/10.1116/1.3242637

Abstract

Science & Technology Technology Physical Sciences Engineering Electrical & Electronic Nanoscience & Nanotechnology Physics Applied Engineering Science & Technology - Other Topics Physics ENGINEERING ELECTRICAL & ELECTRONIC NANOSCIENCE & NANOTECHNOLOGY PHYSICS APPLIED annealing arsenic diffusion elemental semiconductors EXAFS ion implantation secondary ion mass spectra semiconductor doping silicon IMPLANTED SILICON DOPED SILICON DIFFUSION SI
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