Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies

MA Hughes; MA Lourenco; JD Carey; M Ben; KP Homewood

doi:10.1364/OE.22.029292

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Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies

Journal article

Open access

Peer reviewed

Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies

MA Hughes, MA Lourenco, JD Carey, M Ben and KP Homewood

OPTICS EXPRESS, Vol.22(24), pp.29292-29303

01/12/2014

DOI: https://doi.org/10.1364/OE.22.029292

Abstract

Science & Technology

Physical Sciences

Optics

MONONUCLEAR LANTHANOID COMPLEXES

ELECTRON-PARAMAGNETIC-RESONANCE

DOPED CHALCOGENIDE GLASS

LIGHT-EMITTING-DIODES

SINGLE-ION MAGNETS

MU-M LUMINESCENCE

ENERGY-LEVELS

DISLOCATION LOOPS

ERBIUM

PARAMETERS

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Title: Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies
Creators: MA Hughes
MA Lourenco
JD Carey
M Ben
KP Homewood
Publication Details: OPTICS EXPRESS, Vol.22(24), pp.29292-29303
Publisher: OPTICAL SOC AMER
Date published: 01/12/2014
Date submitted: 22/12/2014
Identifiers: 99514842602346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies

Abstract

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