Surrey researchers Sign in
Back
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon
Journal article   Peer reviewed

Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon

D Giubertoni, G Pepponi, S Gennaro, M Bersani, MA Sahiner, SP Kelty, R Doherty, MA Foad, M Kah, KJ Kirkby, …
JOURNAL OF APPLIED PHYSICS, Vol.104(10), ARTN 10371
15/11/2008
DOI: https://doi.org/10.1063/1.3026706

Abstract

Science & Technology Physical Sciences Physics Applied Physics PHYSICS APPLIED arsenic carrier density density functional theory elemental semiconductors Hall effect rapid thermal annealing secondary ion mass spectra semiconductor doping semiconductor thin films silicon vacancies (crystal) X-ray absorption spectra ABSORPTION FINE-STRUCTURE DOPED SILICON SI CRYSTALS CRYSTALLOGRAPHIC POSITION ENHANCED DIFFUSION SOLID SOLUBILITY DEACTIVATION IMPURITIES DEFECTS LASER
url
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000262605800082&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=11d2a86992e85fb529977dad66a846d5View
Author

Metrics

24 Record Views
18 Times Cited - Web of Science

Details

Usage Policy

Usage details for all content viewed and downloaded in this site are shared with IRUS-UK (Institutional Repository Usage Statistics UK). Cookies are used to remember your decision. Click Accept to accept usage details sharing and the cookies.

Learn more