Constraints on micro-Raman strain metrology for highly doped strained Si materials

L O'Reilly; K Horan; PJ McNally; NS Bennett; NEB Cowern; A Lankinen; BJ Sealy; RM Gwilliam; TCQ Noakes; P Bailey

doi:10.1063/1.2942392

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Constraints on micro-Raman strain metrology for highly doped strained Si materials

Journal article

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Constraints on micro-Raman strain metrology for highly doped strained Si materials

L O'Reilly, K Horan, PJ McNally, NS Bennett, NEB Cowern, A Lankinen, BJ Sealy, RM Gwilliam, TCQ Noakes and P Bailey

APPLIED PHYSICS LETTERS, Vol.92(23), pp.?-?

09/06/2008

DOI: https://doi.org/10.1063/1.2942392

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

STRESS MEASUREMENTS

SILICON

SPECTROSCOPY

JUNCTIONS

FILMS

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Title: Constraints on micro-Raman strain metrology for highly doped strained Si materials
Creators: L O'Reilly
K Horan
PJ McNally
NS Bennett
NEB Cowern
A Lankinen
BJ Sealy
RM Gwilliam
TCQ Noakes
P Bailey
Publication Details: APPLIED PHYSICS LETTERS, Vol.92(23), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 09/06/2008
Date submitted: 27/05/2010
Identifiers: 99514960902346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Constraints on micro-Raman strain metrology for highly doped strained Si materials

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