Conduction-band crossover induced by misfit strain in InSb∕GaSb self-assembled quantum dots

Journal article

KT Lai

Physical Review B: Condensed Matter and Materials Physics, Vol.76(19), pp.193309-193309

20/11/2007

Abstract

III-V semiconductors

self-assembled quantum dots

Conduction-band crossover

photoluminescence

url

http://link.aps.org/doi/10.1103/PhysRevB.76.193309View

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Title: Conduction-band crossover induced by misfit strain in InSb∕GaSb self-assembled quantum dots
Creators: KT Lai
Publication Details: Physical Review B: Condensed Matter and Materials Physics, Vol.76(19), pp.193309-193309
Publisher: The American Physical Society
Date published: 20/11/2007
Date submitted: 17/05/2017
Identifiers: 99514788702346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article