Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers

P Kidd; DJ Dunstan; HG Colson; MA Lourenco; A Sacedon; F GonzalezSanz; L Gonzalez; Y Gonzalez; R Garcia; D Gonzalez; FJ Pacheco; PJ Goodhew

doi:10.1016/S0022-0248(96)00665-3

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Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers

Journal article

Peer reviewed

Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers

P Kidd, DJ Dunstan, HG Colson, MA Lourenco, A Sacedon, F GonzalezSanz, L Gonzalez, Y Gonzalez, R Garcia, D Gonzalez, …

JOURNAL OF CRYSTAL GROWTH, Vol.169(4), pp.649-659

01/12/1996

DOI: https://doi.org/10.1016/S0022-0248(96)00665-3

Abstract

Science & Technology

Physical Sciences

Technology

Crystallography

Materials Science

Multidisciplinary

Physics

Applied

Materials Science

Physics

CRYSTALLOGRAPHY

MATERIALS SCIENCE

MULTIDISCIPLINARY

PHYSICS

APPLIED

STRAIN RELAXATION

PLASTIC RELAXATION

BEAM-EPITAXY

EPILAYERS

GROWTH

RELIEF

GAAS

DIFFRACTION

DESIGN

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Title: Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers
Creators: P Kidd
DJ Dunstan
HG Colson
MA Lourenco
A Sacedon
F GonzalezSanz
L Gonzalez
Y Gonzalez
R Garcia
D Gonzalez
FJ Pacheco
PJ Goodhew
Publication Details: JOURNAL OF CRYSTAL GROWTH, Vol.169(4), pp.649-659
Publisher: ELSEVIER SCIENCE BV
Date published: 01/12/1996
Date submitted: 17/05/2017
Identifiers: 99514742002346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Comparison of the crystalline quality of step-graded and continuously graded InGaAs buffer layers

Abstract

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