Abstract
This work presents a comparison of DC, RF and power characteristics at high frequency as well as a comparison of the uniformity of these parameters across each wafer in pseudomorphic high electron mobility transistor structures grown by MBE and MOCVD. In either case, both single and double heterostructures grown on 3″ S. I. GaAs substrates were investigated. The comparison revealed that uniformity characteristics are similar, independent of the epitaxial method used or of the type of heterostructure grown, and that device uniformity mapping does not correlate to material uniformity mapping. In terms of power characteristics, double heterostructures exhibited better performance than single heterostructures for both epitaxial methods.