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Circular photogalvanic effect in HgTe/CdHgTe quantum well structures
Journal article   Peer reviewed

Circular photogalvanic effect in HgTe/CdHgTe quantum well structures

B. Wittmann, S. N. Danilov, V. V. Bel'kov, S. A. Tarasenko, E. G. Novik, H. Buhmann, C. Bruene, L. W. Molenkamp, Z. D. Kvon, N. N. Mikhailov, …
Semiconductor science and technology, Vol.25(9), pp.095005/1-095005/7
01/09/2010

Abstract

Engineering Engineering, Electrical & Electronic Materials Science Materials Science, Multidisciplinary Physical Sciences Physics Physics, Condensed Matter Science & Technology Technology
We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed in terms of a microscopic model.

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