Characterization of CdZnTe Crystals Grown Using a Seeded Modified Vertical Bridgman Method

Y Xu; W Jie; PJ Sellin; T Wang; L Fu; G Zha; P Veeramani

doi:10.1109/TNS.2009.2026277

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Characterization of CdZnTe Crystals Grown Using a Seeded Modified Vertical Bridgman Method

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Characterization of CdZnTe Crystals Grown Using a Seeded Modified Vertical Bridgman Method

Y Xu, W Jie, PJ Sellin, T Wang, L Fu, G Zha and P Veeramani

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol.56(5), pp.2808-2813

01/10/2009

DOI: https://doi.org/10.1109/TNS.2009.2026277

Abstract

Science & Technology

Technology

Engineering

Electrical & Electronic

Nuclear Science & Technology

Engineering

Mobility lifetime product

seeded growth

Te inclusions

Zinc uniformity

CADMIUM ZINC TELLURIDE

RADIATION DETECTORS

SPECTROSCOPY

SEGREGATION

CD1-XZNXTE

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Title: Characterization of CdZnTe Crystals Grown Using a Seeded Modified Vertical Bridgman Method
Creators: Y Xu
W Jie
PJ Sellin
T Wang
L Fu
G Zha
P Veeramani
Publication Details: IEEE TRANSACTIONS ON NUCLEAR SCIENCE, Vol.56(5), pp.2808-2813
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Date published: 01/10/2009
Date submitted: 03/01/2012
Identifiers: 99514048202346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Characterization of CdZnTe Crystals Grown Using a Seeded Modified Vertical Bridgman Method

Abstract

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