Characterization of C:H:N deposition from CH4/N-2 rf plasmas using optical emission spectroscopy

KJ Clay; SP Speakman; GAJ Amaratunga; SRP Silva

doi:10.1063/1.361439

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Characterization of C:H:N deposition from CH4/N-2 rf plasmas using optical emission spectroscopy

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Characterization of C:H:N deposition from CH4/N-2 rf plasmas using optical emission spectroscopy

KJ Clay, SP Speakman, GAJ Amaratunga and SRP Silva

JOURNAL OF APPLIED PHYSICS, Vol.79(9), pp.7227-7233

01/05/1996

DOI: https://doi.org/10.1063/1.361439

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

AMORPHOUS-CARBON FILMS

LASER-INDUCED PLASMA

DIAMOND

NITRIDE

DISCHARGE

DILUTION

GAS

CH4

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Title: Characterization of C:H:N deposition from CH4/N-2 rf plasmas using optical emission spectroscopy
Creators: KJ Clay
SP Speakman
GAJ Amaratunga
SRP Silva
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.79(9), pp.7227-7233
Publisher: AMER INST PHYSICS
Date published: 01/05/1996
Date submitted: 29/09/2010
Identifiers: 99513602502346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Characterization of C:H:N deposition from CH4/N-2 rf plasmas using optical emission spectroscopy

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