Certified ion implantation fluence by high accuracy RBS

JL Colaux; C Jeynes; KC Heasman; RM Gwilliam

doi:10.1039/c4an02316a

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Certified ion implantation fluence by high accuracy RBS

Journal article

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Peer reviewed

Certified ion implantation fluence by high accuracy RBS

JL Colaux, C Jeynes, KC Heasman and RM Gwilliam

ANALYST, Vol.140(9), pp.3251-3261

01/01/2015

DOI: https://doi.org/10.1039/c4an02316a

Abstract

Science & Technology

Physical Sciences

Chemistry

Analytical

Chemistry

RUTHERFORD BACKSCATTERING SPECTROMETRY

SUPERCONDUCTING MGB2

ANNEALING ANALYSIS

SURFACE-ANALYSIS

THIN-FILMS

SILICON

IBA

CALIBRATION

CERTIFICATION

SCATTERING

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Title: Certified ion implantation fluence by high accuracy RBS
Creators: JL Colaux
C Jeynes
KC Heasman
RM Gwilliam
Publication Details: ANALYST, Vol.140(9), pp.3251-3261
Publisher: ROYAL SOC CHEMISTRY
Date published: 01/01/2015
Date submitted: 30/03/2015
Identifiers: 99516712602346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Certified ion implantation fluence by high accuracy RBS

Abstract

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