Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose

SJ Henley; D Cherns

doi:10.1063/1.1559417

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Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose

Journal article

Peer reviewed

Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose

SJ Henley and D Cherns

JOURNAL OF APPLIED PHYSICS, Vol.93(7), pp.3934-3939

01/04/2003

DOI: https://doi.org/10.1063/1.1559417

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

LIGHT-EMITTING-DIODES

MULTIPLE-QUANTUM WELLS

SCREW DISLOCATIONS

V-DEFECTS

GAN

CENTERS

LAYERS

FIELDS

GAINN

EDGE

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Title: Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose
Creators: SJ Henley
D Cherns
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.93(7), pp.3934-3939
Publisher: AMER INST PHYSICS
Date published: 01/04/2003
Date submitted: 17/05/2017
Identifiers: 99515755202346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose

Abstract

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