Calculation of electric field and optical transitions in InGaN/GaN quantum wells

UME Christmas; AD Andreev; DA Faux

doi:10.1063/1.2077843

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Calculation of electric field and optical transitions in InGaN/GaN quantum wells

Journal article

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Peer reviewed

Calculation of electric field and optical transitions in InGaN/GaN quantum wells

UME Christmas, AD Andreev and DA Faux

JOURNAL OF APPLIED PHYSICS, Vol.98(7), pp.?-?

01/10/2005

DOI: https://doi.org/10.1063/1.2077843

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

III-V NITRIDES

GALLIUM NITRIDE

PIEZOELECTRIC COEFFICIENT

ELASTIC-CONSTANTS

THIN-FILMS

ALUMINUM NITRIDE

GAN

POLARIZATION

ALN

1ST-PRINCIPLES

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Title: Calculation of electric field and optical transitions in InGaN/GaN quantum wells
Creators: UME Christmas
AD Andreev
DA Faux
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.98(7), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 01/10/2005
Date submitted: 27/05/2010
Identifiers: 99516851902346
Academic Unit: School of Maths and Physics
Language: English
Resource Type: Journal article

Calculation of electric field and optical transitions in InGaN/GaN quantum wells

Abstract

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