Abstract
In this paper, intrinsic device parameters, directly extracted from buried-channel n-HMODFET devices biased at micropower supply levels are presented. Sub-threshold region peaks in plots of intrinsic transit frequency and transconductance vs. bias clearly exemplify the devices suitability for RF/micropower applications. Measurements are also presented for a SiGe n-HMODFET inverting amplifier and self-biased dynamic load with a maximum (G ) power gain of 26 dB and corner frequency of 40 MHz recorded for an amplifier device power-drain of just 77 μW and a total power drain of 150 μW. A comparison of gain-efficiency (maximum gain vs. total input power) at micropower (200 mV V) and full power (3 V V) yields 4× greater efficiency at micropower supply levels. © 2004 Elsevier Ltd. All rights reserved.