Boron diffusion and activation in SOI and bulk Si: The role of the buried interface

M Aboy; L Pelaz; J Montserrat; FJ Bermudez; JJ Hamilton

doi:10.1016/j.nimb.2006.12.157

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Boron diffusion and activation in SOI and bulk Si: The role of the buried interface

Journal article

Peer reviewed

Boron diffusion and activation in SOI and bulk Si: The role of the buried interface

M Aboy, L Pelaz, J Montserrat, FJ Bermudez and JJ Hamilton

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.257, pp.152-156

01/04/2007

DOI: https://doi.org/10.1016/j.nimb.2006.12.157

Abstract

Science & Technology

Technology

Physical Sciences

Instruments & Instrumentation

Nuclear Science & Technology

Physics

Atomic

Molecular & Chemical

Physics

Nuclear

Physics

INSTRUMENTS & INSTRUMENTATION

NUCLEAR SCIENCE & TECHNOLOGY

PHYSICS

ATOMIC

MOLECULAR & CHEMICAL

PHYSICS

NUCLEAR

modeling

boron

activation

SOI

SILICON-ON-INSULATOR

IMPLANTATION

DISSOLUTION

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Title: Boron diffusion and activation in SOI and bulk Si: The role of the buried interface
Creators: M Aboy
L Pelaz
J Montserrat
FJ Bermudez
JJ Hamilton
Publication Details: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.257, pp.152-156
Publisher: ELSEVIER SCIENCE BV
Date published: 01/04/2007
Date submitted: 17/05/2017
Identifiers: 99514069802346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Boron diffusion and activation in SOI and bulk Si: The role of the buried interface

Abstract

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