Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

JJ Hamilton; KJ Kirkby; NEB Cowern; EJH Collart; M Bersani; D Giubertoni; S Gennaro; A Parisini

doi:10.1063/1.2778749

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Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

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Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

JJ Hamilton, KJ Kirkby, NEB Cowern, EJH Collart, M Bersani, D Giubertoni, S Gennaro and A Parisini

APPLIED PHYSICS LETTERS, Vol.91(9), pp.?-?

27/08/2007

DOI: https://doi.org/10.1063/1.2778749

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Title: Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink
Creators: JJ Hamilton
KJ Kirkby
NEB Cowern
EJH Collart
M Bersani
D Giubertoni
S Gennaro
A Parisini
Publication Details: APPLIED PHYSICS LETTERS, Vol.91(9), pp.?-?
Publisher: AMER INST PHYSICS
Date published: 27/08/2007
Date submitted: 27/05/2010
Identifiers: 99511950102346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article

Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink

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