Auger recombination dynamics of InxGa1-xSb

Journal article

Peer reviewed

P. C Findlay, C. R Pidgeon, H Pellemans, R Kotitschke, B. N Murdin, T Ashley, A. D Johnson, A. M White and C. T Elliott

Semiconductor science and technology, Vol.14(12), pp.1026-1030

01/12/1999

Abstract

Charge carriers: generation, recombination, lifetime, and trapping

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Conductivity phenomena in semiconductors and insulators

Electronic transport in condensed matter

Exact sciences and technology

Physics

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Title: Auger recombination dynamics of InxGa1-xSb
Creators: P. C Findlay - Heriot-Watt University
C. R Pidgeon - Heriot-Watt University
H Pellemans - Heriot-Watt University
R Kotitschke - University of Surrey
B. N Murdin - University of Surrey
T Ashley - Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, United Kingdom
A. D Johnson - Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, United Kingdom
A. M White - Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, United Kingdom
C. T Elliott - Defence Research Agency, St Andrews Road, Malvern, Worcs WR14 3PS, United Kingdom
Publication Details: Semiconductor science and technology, Vol.14(12), pp.1026-1030
Publisher: Institute of Physics
Number of pages: 5
Publication Date: 01/12/1999
Identifiers: 991142230602346; WOS:000084232100002
Academic Unit: School of Maths and Physics
Language: English
Resource Type: Journal article