Abstract
Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin (∼10 nm) oxide/suboxide heterostructures (e.g. HfO2/HfOx or Ta2O5/TaOx) is difficult using conventional film deposition techniques. In this study, ion-implantation is shown to provide an alternative means of synthesizing such structures, with results reported for Ta2O5/TaOx heterostructures fabricated by oxygen-implantation of Ta. The electrical properties of the fabricated heterostructures are discussed with reference to the physical structure of the samples determined from transmission electron microscopy and X-ray photoelectron spectroscopy.