Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition

L Wong; M Milosavljevic; MA Lourenco; G Shao; R Valizadeh; JS Colligon; KP Homewood

doi:10.1088/0268-1242/23/3/035007

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Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition

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Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition

L Wong, M Milosavljevic, MA Lourenco, G Shao, R Valizadeh, JS Colligon and KP Homewood

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.23(3), ARTN 03500

01/03/2008

DOI: https://doi.org/10.1088/0268-1242/23/3/035007

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Condensed Matter

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ELECTRICAL & ELECTRONIC

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CONDENSED MATTER

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Title: Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition
Creators: L Wong
M Milosavljevic
MA Lourenco
G Shao
R Valizadeh
JS Colligon
KP Homewood
Publication Details: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Vol.23(3), ARTN 03500
Publisher: IOP PUBLISHING LTD
Date published: 01/03/2008
Date submitted: 17/05/2017
Identifiers: 99512905902346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition

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