Abstract
This paper investigated the self-heating effects in poly-Si thin-film transistors (TFTs) and circuits) by using a self-consistent electro-thermal simulation approach. The analysis indicates that, for the poly-Si technology, self-heating may lead to a significant degradation of the device's characteristics, and severely impact the circuit performance; therefore, reinforce the need for effective cooling strategies and also accurate device/circuit level models, including electro-thermal coupling effects, for reliable poly-Si TFT circuit design and integration. © 2006 IEEE.