Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system

JM Miloszewski; MS Wartak; P Weetman; O Hess

doi:10.1063/1.3223288

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Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system

Journal article

Peer reviewed

Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system

JM Miloszewski, MS Wartak, P Weetman and O Hess

JOURNAL OF APPLIED PHYSICS, Vol.106(6), ARTN 06310

15/09/2009

DOI: https://doi.org/10.1063/1.3223288

Abstract

Science & Technology

Physical Sciences

Physics

Applied

Physics

PHYSICS

APPLIED

DIFFERENTIAL GAIN

LASERS

INDEX

DIODE

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Title: Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system
Creators: JM Miloszewski
MS Wartak
P Weetman
O Hess
Publication Details: JOURNAL OF APPLIED PHYSICS, Vol.106(6), ARTN 06310
Publisher: AMER INST PHYSICS
Date published: 15/09/2009
Date submitted: 17/05/2017
Identifiers: 99514183002346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

Analysis of linewidth enhancement factor for quantum well structures based on InGaAsN/GaAs material system

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