Abstract
A single carbon nanotube diode is reported, with Ti and Pd contacts, and split gates. Without gate bias the device displays strong rectification, with a leakage current (I) of 6 × 10 A, and an ideality factor (η) of 1.38. When the gate above the Ti contact is biased negatively the diode inverts. When positive bias is then applied to the gate above the Pd contact minority carrier injection is suppressed. Configured such I and η were 2 × 10 A and 2.01, respectively. Electrical characterization indicates that the Schottky barrier height for electrons is lower for the Pd contact than the Ti contact. © 2013 AIP Publishing LLC.