Abstract
A new extrinsic network and extrinsic parameter extraction methodology is developed for high power RF LDMOS transistor modeling. This new method uses accurate manifold deembedding using electromagnetic simulation, and optimization of the extrinsic network parameter values over a broad frequency range. The new extrinsic network accommodates feedback effects which are observed in high power transistors. This improved methodology allows us to achieve a good agreement between measured and modeled S-parameters in the frequency range of 0.5 to 6 GHz for different bias conditions. Large-signal verification of this new model shows a very good match with measurements at 2.14 GHz. © 2008 IEEE.