Abstract
Nano-scale devices and high power transistors present extreme impedances, which are far removed from the 50-Ω reference impedance of conventional test equipment, resulting in a reduction in the measurement sensitivity as compared with impedances close to the reference impedance. This letter describes a novel method based on active interferometry to increase the measurement sensitivity of a VNA for measuring such extreme impedances, using only a single coupler. The theory of the method is explained with supporting simulation. An interferometry-based method is demonstrated for the first time with on-wafer measurements, resulting in an improved measurement sensitivity for extreme impedance device characterization of up to 9%.