ARE THERE RECONSTRUCTION SOLITONS AT PARTIAL DISLOCATIONS IN SILICON?

M Heggie

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Journal article

ARE THERE RECONSTRUCTION SOLITONS AT PARTIAL DISLOCATIONS IN SILICON?

M Heggie

Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, Vol.51(4), pp.61-65

01/12/1986

Abstract

Deposits may accumulate at dislocation cores and produce additional acceptor levels. This is possible if an acceptor dopant takes up the positions of atoms having three nearest neighbors rather than four. This may imply that solitons occur in reconstructed dislocations.

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Title: ARE THERE RECONSTRUCTION SOLITONS AT PARTIAL DISLOCATIONS IN SILICON?
Creators: M Heggie
Publication Details: Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, Vol.51(4), pp.61-65
Date published: 01/12/1986
Date submitted: 17/05/2017
Identifiers: 99515558002346
Academic Unit: University of Surrey
Resource Type: Journal article

ARE THERE RECONSTRUCTION SOLITONS AT PARTIAL DISLOCATIONS IN SILICON?

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