A charge-control HEMT model incorporating deep level effects

R Singh; CM Snowden

doi:10.1016/S0038-1101(98)00316-5

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A charge-control HEMT model incorporating deep level effects

Journal article

Peer reviewed

A charge-control HEMT model incorporating deep level effects

R Singh and CM Snowden

SOLID-STATE ELECTRONICS, Vol.43(3), pp.473-480

01/03/1999

DOI: https://doi.org/10.1016/S0038-1101(98)00316-5

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Physics

Applied

Physics

Condensed Matter

Engineering

Physics

ENGINEERING

ELECTRICAL & ELECTRONIC

PHYSICS

APPLIED

PHYSICS

CONDENSED MATTER

EPITAXIAL GAAS CRYSTALS

DX-CENTER

NUMERICAL-SIMULATION

ALXGA1-XAS

HETEROJUNCTIONS

SUBSTRATE

TRAPS

BULK

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Title: A charge-control HEMT model incorporating deep level effects
Creators: R Singh
CM Snowden
Publication Details: SOLID-STATE ELECTRONICS, Vol.43(3), pp.473-480
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Date published: 01/03/1999
Date submitted: 16/05/2017
Identifiers: 99516578302346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

A charge-control HEMT model incorporating deep level effects

Abstract

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