A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors

Journal article

Open access

Peer reviewed

JP Everett, MJ Kearney, H Rueda, EM Johnson, PH Aaen, J Wood and CM Snowden

IEEE T ELECTRON DEV, Vol.58(9), pp.3081-3088

01/09/2011

Abstract

Field-effect transistor (FET)

laterally diffused metal-oxide-semiconductor (LDMOS)

quasi-2-D (Q2-D)

transistor model

INCLUDING QUASI-SATURATION

CHARGE-SHEET MODEL

MOSFET MODEL

VOLTAGE

CIRCUIT

DEVICE

CAD

pdf

ED2011_Everett_Revised1.32 MBDownload View

Text Open Access

url

http://dx.doi.org/10.1109/TED.2011.2160546View

Published (Version of record)

408 File views/ downloads

49 Record Views

Title: A Quasi-Two-Dimensional Model for High-Power RF LDMOS Transistors
Creators: JP Everett
MJ Kearney
H Rueda
EM Johnson
PH Aaen
J Wood
CM Snowden
Publication Details: IEEE T ELECTRON DEV, Vol.58(9), pp.3081-3088
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Date published: 01/09/2011
Date submitted: 07/03/2013
Identifiers: 99515999902346
Academic Unit: School of Computer Science and Electronic Engineering
Language: English
Resource Type: Journal article