200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study

M. I. Current; D. Lopes; M.A. Foad; Jonathan England; C. Jones; D. Su

doi:10.1116/1.589805

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200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study

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200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study

M. I. Current, D. Lopes, M.A. Foad, Jonathan England, C. Jones and D. Su

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.16(1), pp.327-333

01/1998

DOI: https://doi.org/10.1116/1.589805

Abstract

Atomic profiles (secondary ion mass spectroscopy) and cross-section transmission electron microscopy (TEM) images of selectively etched, annealed profiles were studied for boron energies from 200 eV to 10 keV and rapid thermal processing anneals at 900, 975, and 1050 °C. Consistent variations of dopant depth were obtained over this process range. TEM images showed evidence of lateral dopant variation near the edges of poly-Si gate structures, perhaps an effect of lateral straggling and reflection of ions from the polymask.

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Title: 200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study
Creators: M. I. Current
D. Lopes
M.A. Foad
Jonathan England
C. Jones
D. Su
Publication Details: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.16(1), pp.327-333
Publisher: American Vacuum Society
Date published: 01/1998
Date submitted: 13/06/2017
Identifiers: 99513043702346
Copyright: © 1998 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. I. Current, D. Lopes, M. A. Foad, J. G. England, C. Jones, and D. Su, J. Vac. Sci. Technol. B 16, 327 (1998). and may be found at http://dx.doi.org/10.1116/1.589805
Academic Unit: School of Computer Science and Electronic Engineering
Resource Type: Journal article

200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study

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