2-DIMENSIONAL NUMERICAL-SIMULATION OF TRAPPING PHENOMENA IN THE SUBSTRATE OF GAAS-MESFETS

TM BARTON; CM SNOWDEN

doi:10.1109/16.106234

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2-DIMENSIONAL NUMERICAL-SIMULATION OF TRAPPING PHENOMENA IN THE SUBSTRATE OF GAAS-MESFETS

Journal article

Peer reviewed

2-DIMENSIONAL NUMERICAL-SIMULATION OF TRAPPING PHENOMENA IN THE SUBSTRATE OF GAAS-MESFETS

TM BARTON and CM SNOWDEN

IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol.37(6), pp.1409-1415

01/06/1990

DOI: https://doi.org/10.1109/16.106234

Abstract

Science & Technology

Technology

Physical Sciences

Engineering

Electrical & Electronic

Physics

Applied

Engineering

Physics

ENGINEERING

ELECTRICAL & ELECTRONIC

PHYSICS

APPLIED

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Title: 2-DIMENSIONAL NUMERICAL-SIMULATION OF TRAPPING PHENOMENA IN THE SUBSTRATE OF GAAS-MESFETS
Creators: TM BARTON
CM SNOWDEN
Publication Details: IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol.37(6), pp.1409-1415
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Date published: 01/06/1990
Date submitted: 16/05/2017
Identifiers: 99511789002346
Academic Unit: University of Surrey
Language: English
Resource Type: Journal article

2-DIMENSIONAL NUMERICAL-SIMULATION OF TRAPPING PHENOMENA IN THE SUBSTRATE OF GAAS-MESFETS

Abstract

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