Abstract
Organic light emitting diodes have been fabricated using erbium tris(8-hydroxy-quinoline) as the emitting layer and N, N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl- 4,4′-diamine (TPD) as the hole transporting layer. Room temperature electroluminescence was observed at 1.5 μm due to intra-atomic transitions between the 4I13/2 and 4I15/2 levels in the Er3+ ion. These results make the possibility of producing silicon compatible 1.5 μm technology based on such devices a reality.