10 Gb/s noise suppression using an ion implanted waveguide saturable absorber

M Pantouvaki; SF Kong; MJ Fice; AJ Seeds; RM Gwilliam; P Cannard

doi:10.1109/CLEO.2006.4628520

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Journal article

10 Gb/s noise suppression using an ion implanted waveguide saturable absorber

M Pantouvaki, SF Kong, MJ Fice, AJ Seeds, RM Gwilliam and P Cannard

Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

01/12/2006

DOI: https://doi.org/10.1109/CLEO.2006.4628520

Abstract

Noise suppression of 3dB per pass is demonstrated using a top-implanted passive InGaAsP/InGaAsP multiple quantum well ridge waveguide saturable absorber. The contrast ratio and recovery time are 3dB and ∼16ps respectively. © 2006 Optical Society of America.

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Title: 10 Gb/s noise suppression using an ion implanted waveguide saturable absorber
Creators: M Pantouvaki
SF Kong
MJ Fice
AJ Seeds
RM Gwilliam
P Cannard
Publication Details: Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
Date published: 01/12/2006
Date submitted: 17/05/2017
Identifiers: 99515715102346
Academic Unit: University of Surrey
Resource Type: Journal article

10 Gb/s noise suppression using an ion implanted waveguide saturable absorber

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