Abstract
17atoms cm-2. This blistering was due to accumulation of oxygen at the aluminium-quartz interface. With these results it is then possible to explain the change in the resonant frequency of a S. A. W. resonator after implanting with 50keV O2+ ions. Additional work (presented in Appendix 1) deals with the investigation of the mass loading and lateral stress caused by argon implantation of aluminium, and the angular variation of the sputtering yield (S0) of gold and germanium, with the same ion species. Both results were obtained using the triple resonator technique.