Digital technology is ubiquitous in modern life, enabling consumer products and services, as well as providing the monitoring and control of applications for transport and infrastructure, where high reliability is critical. Commercial Static Random Access Memories (SRAMs) are a common device type in most embedded electronic systems, and can be used as a bellwether technology for modern digital electronics. These technologies are sensitive to radiation, of specific note are bit flips (Single Event Upsets (SEU)), where a single quanta of ionising radiation can change the data stored within a memory cell. There has not been a comprehensive survey of the sensitivity of commercially available

SRAM technologies to different radiation environments for ∼20 years. Presented within this thesis are new results from experimentation of the SEU sensitivity of modern commercial SRAMs to a range of proton and neutron Environments. The data shows the SEU sensitivity of commercial SRAMs has increased for modern technologies, with a broader range of upset levels compared to the previous generations. The experimental design enabled observations of previously unpublished behaviours that enhance the upset rate. One SRAM type exhibited complex behaviours including; bursts of upsets, high Multiple Bit Upset (MBU) ratios and micro-latches from both protons and neutrons ≥14 MeV. The bit upset and micro-latch rates for the modern commercial SRAM technologies have been applied to possible space and terrestrial missions, illustrating enhanced risks to satellites and to high altitude aircraft during Ground Level Enhancements (GLE), when the neutron and proton flux is significantly higher. Presented within this thesis is an assessment that the observed micro-latches also contribute to a reduced device lifetime, which is not currently considered when assessing the reliability of modern devices (or broader systems).