Abstract
14 cm-2 dose implanted at anenergy of 300 keV and RT. The electrical activity was found to increase with time and temperature but for sufficiently long times, this activity saturates for a given temperature. Detailed analysis of the data produced: i) an activation energy of 1.2-0.1 eV which is suggested to be that required to remove Sn or Se from a complex defect where it is inactive or compensated and subsequently place it on an appropriate vacancy where it acts as a donor and, ii) activation energies of diffusion of 2.5 +/- 0.1 eV and 4.3 +/- 0.4 eV for Sn and Se implants in GaAs, respectively.