Abstract
Semiconductor quantum dots are of particular interest, both for fundamental research and possible applications. Quantum dots are considered to be artificial atoms for which shape and properties can be manipulated. Due to the lattice mismatch between quantum dot and surrounding material, it is essential to investigate the influence of the strain distribution: here we use the Valence Force Field method. The strain-induced confinement potentials of the Quantum dot was investigated in terms of the eight-band strain-dependent k.p approach. In order to study the electronic properties of Group IV and III-V quantum dots, the sp3s* empirical tight-binding method has been used. We implement this method to investigate the electronic structure and application of quantum dot in the view of Quantum Computing. We have shown, for example, that the leakage of quantum information in a double-dot electric field driven qubit gate is strongly influenced by the geometry of double quantum dot and the amplitude of the electric pulse.