Abstract
In this work the merits of novel III-V alloys are considered from a spintronic perspective. This is done using simulations of III-VI-Bi material parameters to calculate the Rashba parameter for bulk materials and test structures. A seven-fold increase over GaAs is predicted for GaAsBi and InSbBi for 10% and 5% bismuth incorporation respectively. Further to this experimental techniques are developed to investigate current InSb technology, where a large spin splitting is observed. In order to analyse more complex spintronic structures, a model has been developed to develop an understanding of the complex behaviour of the electrochemical potential in quantum well systems. This approach shows promising agreement with the experimental data featured in this work.