Abstract
Transistor devices with non-linear contact dependences have shown potential in their application as sensors, due to their high gain, low saturation voltage, and a low power consumption. Source gated transistors (SGT) have combined these properties with thin film technology; allowing them to be printed and used in flexible electronics. In turn, making them ideal for use in wearable health-monitoring devices.
There are additional transistor designs which derived from an SGT which may also have some future applications. One such device is the multimodal transistor (MMT), which utilises two gates, each operating a different aspect of the device. This novel device has shown potential in similar applications to the SGT, where a greater control of the device behaviour is desired.
The current challenge is the time and expense needed in designing SGTs which are fit-forpurpose, as their operation needs to be calibrated to a specific application. This requires the production of many fabricated devices or models which then need to be tested in a circuit. The proposed solution is to use compact models as opposed to the standard TCAD models.
Compact modelling is a technique used to predict the behaviour of a device much faster than other modelling techniques, while maintaining a sufficient level of accuracy. It has been applied with desirable results in common transistors, such as TFTs and MOSFETs. However, it has yet to be applied to devices which depict more unique behaviours and operation. This project focuses on applying compact modelling to SGT and MMT devices and demonstrating the process and the benefits of this approach.