Abstract
For the creation of p-type transistor junctions, this project tries to ascertain if other members of the halide group are as successful as fluorine when implanted in compound form with boron into a crystalline silicon substrate. A series of boron halide implants were performed, consisting of boron di-fluoride, boron di-chloride, boron di-bromide and also the monomer boron, all to a boron fluence of 2 x 1014 ions/cm2 and 1015 ions/cm2. In parallel with the processing of the heat treated implanted samples using the Hall effect method, a literature survey was generated. This entailed searching for and reading through appropriate literature, then collating a compendium of the salient aspects within the 'boron implanted into silicon' domain. The processing of samples encompasses wafer cleaving, thermal treatment, patterning of the sample with the van de Pauw pattern by photolithography, isolation etching and Hall effect measurements. A limited portion of the boron bromide material was analysed by Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS), enabling a view of the as-implanted and heat treated silicon substrate condition. For the boron halide implants, the results show that after thermal treatment the atomic mass of the halide atoms is generally inversely proportional to the level of boron activation. In addition to processing and analysis of boron halide implants, the design and manufacture of an automated sample processing machine was undertaken, enabling safer and more accurate etching of samples. In brief, this dissertation provides Hall effect data for boron halide implants into crystalline silicon, along with a specimen of additional data obtained from RBS and SIMS measurements.