On the thermal stability of 1.3 /spl mu/m GaAsSb/GaAs-based lasers

K. Hild; S.J. Sweeney; D.A. Lock; S. Wright; J.-B. Wang; S.R. Johnson; Y.-H. Zhang

doi:10.1109/LEOS.2005.1548013

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Conference proceeding

On the thermal stability of 1.3 /spl mu/m GaAsSb/GaAs-based lasers

K. Hild, S.J. Sweeney, D.A. Lock, S. Wright, J.-B. Wang, S.R. Johnson and Y.-H. Zhang

2005 IEEE LEOS Annual Meeting Conference Proceedings, pp.331-332

2005

DOI: https://doi.org/10.1109/LEOS.2005.1548013

Abstract

Gallium arsenide

Laser stability

Quantum dot lasers

Radiative recombination

Surface emitting lasers

Temperature dependence

Temperature sensors

Thermal stability

Threshold current

Vertical cavity surface emitting lasers

In spite of the almost ideal variation of the radiative current of 1.3 mum GaAsSb/GaAs-based lasers, the threshold current, J th , is high due to non-radiative recombination accounting for 90% J th near room temperature. This also gives rise to low T 0 values ~60 K close to room temperature, similar to that for InGaAsP/InP

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Title: On the thermal stability of 1.3 /spl mu/m GaAsSb/GaAs-based lasers
Creators: K. Hild - University of Surrey
S.J. Sweeney - University of Surrey
D.A. Lock - University of Surrey
S. Wright - University of Surrey
J.-B. Wang - Arizona State University
S.R. Johnson
Y.-H. Zhang - IAFSE-ECEE: Solid State Electronics Research Center (CSSER)
Publication Details: 2005 IEEE LEOS Annual Meeting Conference Proceedings, pp.331-332
Publisher: IEEE
Date published: 2005
Identifiers: 99783528702346
Academic Unit: School of Maths and Physics
Language: English
Resource Type: Conference proceeding

On the thermal stability of 1.3 /spl mu/m GaAsSb/GaAs-based lasers

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