Compensation processes in molecular beam epitaxially grown zinc selenide doped with nitrogen

Conference proceeding

Peer reviewed

K. A Prior, B Murdin, C. R Pidgeon, S. Y Wang, I Hauksson, J. T Mullins, G Horsburgh and B. C Cavenett

Journal of crystal growth, Vol.138(1-4), pp.94-98

International conference on II-VI compounds and related optoelectronic materials

01/04/1994

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electron states

Exact sciences and technology

Ii-vi semiconductors

Impurity and defect levels

Magnetic double resonances and cross effects

Magnetic resonances and relaxations in condensed matter, mössbauer effect

Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Optically detected magnetic resonance (odmr)

Photoluminescence

Physics

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Title: Compensation processes in molecular beam epitaxially grown zinc selenide doped with nitrogen
Creators: K. A Prior - Heriot-Watt University
B Murdin - Heriot-Watt University
C. R Pidgeon - Heriot-Watt University
S. Y Wang - Heriot-Watt University
I Hauksson - Heriot-Watt University
J. T Mullins - Heriot-Watt University
G Horsburgh - Heriot-Watt University
B. C Cavenett - Heriot-Watt University
Publication Details: Journal of crystal growth, Vol.138(1-4), pp.94-98
Conference: International conference on II-VI compounds and related optoelectronic materials
Publisher: Elsevier
Number of pages: 5
Publication Date: 01/04/1994
Grant note: Hughes Research Laboratories US Advanced Research Projects Agency Brown University. Center for Advanced Materials Research Santa Barbara Research Center US Office of Naval Research
Identifiers: 991142229302346; WOS:A1994NN99700017
Academic Unit: School of Maths and Physics
Language: English
Resource Type: Conference proceeding