Carrier Recombination Processes in 2.3-mu m Epitaxially Grown Mid-Infrared Laser Diodes on Si(001)

Aneirin R. Ellis; Igor P. Marko; Timothy D. Eales; Laurent Cerutti; Marta Rio Calvo; Laura Monge Bartolome; Jean-Baptiste Rodriguez; Eric Tournie; Stephen J. Sweeney

doi:10.1109/ISLC51662.2021.9615906

Conference proceeding

Carrier Recombination Processes in 2.3-mu m Epitaxially Grown Mid-Infrared Laser Diodes on Si(001)

Aneirin R. Ellis, Igor P. Marko, Timothy D. Eales, Laurent Cerutti, Marta Rio Calvo, Laura Monge Bartolome, Jean-Baptiste Rodriguez, Eric Tournie and Stephen J. Sweeney

27TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2021)

01/01/2021

DOI: https://doi.org/10.1109/ISLC51662.2021.9615906

Abstract

SILICON

Epitaxial growth of III-V lasers on CMOS-compatible Si(001) is a key component in the realisation of photonic integrated circuits. In this work we investigate the mechanisms underpinning the performance of first generation GaSb-based devices grown epitaxially on industry-standard Si.

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Title: Carrier Recombination Processes in 2.3-mu m Epitaxially Grown Mid-Infrared Laser Diodes on Si(001)
Creators: Aneirin R. Ellis - University of Surrey
Igor P. Marko - University of Surrey
Timothy D. Eales - University of Surrey
Laurent Cerutti - University of Montpellier
Marta Rio Calvo - University of Montpellier
Laura Monge Bartolome - University of Montpellier
Jean-Baptiste Rodriguez - University of Montpellier
Eric Tournie - University of Montpellier
Stephen J. Sweeney - University of Surrey
Publication Details: 27TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2021)
Publisher: IEEE
Number of pages: 2
Date published: 01/01/2021
Identifiers: 99822526202346
Academic Unit: School of Maths and Physics
Language: English
Resource Type: Conference proceeding

Carrier Recombination Processes in 2.3-mu m Epitaxially Grown Mid-Infrared Laser Diodes on Si(001)

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