Bismuth-based semiconductors for mid-infrared photonic devices

S. J. Sweeney; I. P. Marko; S. R. Jin; K. Hild; Z. Batool

doi:10.1109/PHOSST.2015.7248257

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Bismuth-based semiconductors for mid-infrared photonic devices

S. J. Sweeney, I. P. Marko, S. R. Jin, K. Hild and Z. Batool

2015 IEEE Summer Topicals Meeting Series (SUM), pp.181-182

01/07/2015

DOI: https://doi.org/10.1109/PHOSST.2015.7248257

Abstract

Bismuth

Gallium arsenide

Indium phosphide

Photonic band gap

Strain

Substrates

Owing to the versatile band-structure made possible through the introduction of bismuth in III-V systems, we discuss the potential to produce efficient emitters and detectors in the mid-infrared based upon conventional GaAs and InP substrates.

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Title: Bismuth-based semiconductors for mid-infrared photonic devices
Creators: S. J. Sweeney - University of Surrey
I. P. Marko - University of Surrey
S. R. Jin - University of Surrey
K. Hild - University of Surrey
Z. Batool - University of Surrey
Publication Details: 2015 IEEE Summer Topicals Meeting Series (SUM), pp.181-182
Publisher: IEEE
Date published: 01/07/2015
Identifiers: 99783441002346
Academic Unit: School of Maths and Physics
Language: English
Resource Type: Conference proceeding

Bismuth-based semiconductors for mid-infrared photonic devices

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