Very low energy implanted Bragg gratings in SOI for wafer scale testing applications

R Loiacono; R Topley; A Nakyobe; G Mashanovich; R Gwilliam; G Lulli; R Feldesh; R Jones; G Reed

doi:10.1109/GROUP4.2011.6053712

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Very low energy implanted Bragg gratings in SOI for wafer scale testing applications

R Loiacono, R Topley, A Nakyobe, G Mashanovich, R Gwilliam, G Lulli, R Feldesh, R Jones and G Reed

Proceedings of 8th IEEE International Conference on Group IV Photonics, pp.51-53

8th IEEE GFP (London, UK, 14/09/2010 - 16/09/2010)

2011

DOI: https://doi.org/10.1109/GROUP4.2011.6053712

Abstract

We present Bragg gratings with an effective index change introduced by implanting germanium at only 15KeV. An extinction ratio of 35dB at 1350nm is demonstrated for device lengths of 600μm, furthermore laser annealing is demonstrated.

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Title: Very low energy implanted Bragg gratings in SOI for wafer scale testing applications
Creators: R Loiacono
R Topley
A Nakyobe
G Mashanovich
R Gwilliam
G Lulli
R Feldesh
R Jones
G Reed
Contributors: IEEE (Publisher)
Publication Details: Proceedings of 8th IEEE International Conference on Group IV Photonics, pp.51-53
Conference: 8th IEEE GFP (London, UK, 14/09/2010 - 16/09/2010)
Date published: 2011
Date submitted: 17/05/2017
Identifiers: 99516710302346
Academic Unit: University of Surrey
Resource Type: Conference presentation

Very low energy implanted Bragg gratings in SOI for wafer scale testing applications

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