- Title
- Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions
- Creators
- NEB CowernAJ SmithB ColombeauR GwilliamBJ SealyEJH Collart
- Contributors
- IEEE (null)
- Publication Details
- IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, pp.989-992
- Conference
- IEEE International Electron Devices Meeting (Washington, DC, 05/12/2005 - 07/12/2005)
- Date published
- 01/01/2005
- Date submitted
- 27/05/2010
- Identifiers
- 99515709102346
- Academic Unit
- School of Computer Science and Electronic Engineering
- Resource Type
- Conference presentation
Conference presentation
Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, pp.989-992
IEEE International Electron Devices Meeting (Washington, DC, 05/12/2005 - 07/12/2005)
01/01/2005
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