The growth of gallium nitride films produced by reactive sputtering at low temperature

WT Young; SRP Silva; M Benyoucef; M Kuball; JV Anguita; JM Shannon; KP Homewood; BJ Sealy

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The growth of gallium nitride films produced by reactive sputtering at low temperature

Conference presentation

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The growth of gallium nitride films produced by reactive sputtering at low temperature

WT Young, SRP Silva, M Benyoucef, M Kuball, JV Anguita, JM Shannon, KP Homewood and BJ Sealy

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol.176(1), pp.319-322

3rd International Conference on Nitride Semiconductors (ICNS 99) (MONTPELLIER, FRANCE, 05/07/1999 - 09/07/1999)

16/11/1999

Abstract

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Condensed Matter

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MATERIALS SCIENCE

MULTIDISCIPLINARY

PHYSICS

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CONDENSED MATTER

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Title: The growth of gallium nitride films produced by reactive sputtering at low temperature
Creators: WT Young
SRP Silva
M Benyoucef
M Kuball
JV Anguita
JM Shannon
KP Homewood
BJ Sealy
Contributors: WILEY-V C H VERLAG GMBH (Publisher)
Publication Details: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Vol.176(1), pp.319-322
Conference: 3rd International Conference on Nitride Semiconductors (ICNS 99) (MONTPELLIER, FRANCE, 05/07/1999 - 09/07/1999)
Date published: 16/11/1999
Date submitted: 17/05/2017
Identifiers: 99511887602346
Academic Unit: University of Surrey
Resource Type: Conference presentation

The growth of gallium nitride films produced by reactive sputtering at low temperature

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