- Title
- The evolution of point defects in semiconductors studied using the decay of implanted radioactive isotopes
- Creators
- MO HenryE McGlynnJ FryarS LindnerJ Bollmann
- Contributors
- ELSEVIER SCIENCE BV (Publisher)
- Publication Details
- NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.178, pp.256-259
- Conference
- E-MRS Spring Meeting on Materials Science with Ion Beams (STRASBOURG, FRANCE, 30/05/2000 - 02/06/2000)
- Date published
- 01/05/2001
- Date submitted
- 17/05/2017
- Identifiers
- 99514917002346
- Academic Unit
- University of Surrey
- Resource Type
- Conference presentation
Conference presentation
The evolution of point defects in semiconductors studied using the decay of implanted radioactive isotopes
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Vol.178, pp.256-259
E-MRS Spring Meeting on Materials Science with Ion Beams (STRASBOURG, FRANCE, 30/05/2000 - 02/06/2000)
01/05/2001
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